By Shunpei Yamazaki, Tetsuo Tsutsui
This publication highlights the demonstrate purposes of c-axis aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO), a brand new category of oxide fabric that demanding situations the dominance of silicon within the box of skinny movie semiconductor units. it truly is an enabler for screens with excessive solution and coffee strength intake, in addition to high-productivity production.
The functions of CAAC-IGZO concentrate on liquid crystal monitors (LCDs) with super low strength intake for cellular purposes, and high-resolution and versatile natural light-emitting diode (OLED) monitors, and current a lot of prototypes constructed on the Semiconductor power Laboratory. specifically, the outline of LCDs contains how CAAC-IGZO permits LCDs with super low refresh cost that gives ultra-low strength intake in quite a lot of use circumstances.
Moreover, this booklet additionally deals the newest info of IGZO. The IGZO has lately completed a mobility of 65.5 cm2?}V-s, and it really is anticipated to in all likelihood exceed a hundred cm2?}V-s as excessive as that of LTPS.
A additional books within the sequence will describe the basics of CAAC-IGZO, and the appliance to LSI units.
Key good points:
• Introduces assorted oxide semiconductor field-effect transistor designs and their impression at the reliability and function of LCDs and OLED monitors, either in pixel and panel-integrated using circuits.
• studies basics and offers equipment architectures for high-performance and versatile OLED screens, their circuit designs, and oxide semiconductors as an allowing know-how.
• Explains how oxide semiconductor thin-film transistors enormously can enhance answer and reduce strength intake of LCDs.
Read or Download Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Application to Displays PDF
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Additional resources for Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Application to Displays
43, 367. , et al. 5-inch Quadra-FHD flexible AMOLED with crystalline oxide FET,” Proc. , 223. , et al. 3-in. 8 K × 4 K 664-ppi OLED display using CAAC-OS FETs,” SID Symp. Dig. Tech. , 45, 627. , et al. 78-in 1058-ppi ultra-high-resolution OLED display using CAAC-OS FETs,” SID Symp. Dig. Tech. , 46, 1039. doi. 1 Introduction As described in Chapter 1, a field-effect transistor (FET) using c-axis-aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO) offers advantages over thin-film transistors (TFTs) based on hydrogenated amorphous silicon (a-Si:H) or low-temperature polysilicon (LTPS).
In this way, the dual-gate BGTC transistor is formed by using four photolithography masks [(1) bottom gate, (2) patterned CAAC-IGZO, (3) S/D electrodes, and (4) top gate] and an additional mask to form the contact holes for connecting the S/D electrodes. -type case, an additional patterning process is required for the etch-stop film. The processes listed below are the most important steps of the process and will therefore be explained in detail. • • • • GI formation IGZO active layer formation IGZO baking treatment S/D electrode formation (including the width of the n+ region in the active layer, cleaning of the back channel, and Cu wiring technique).
The development of the OLED materials and FETs for a transfer process (see Chapter 5) to enable flexible display fabrication is currently in progress. 19, the display resolution has increased steadily since 2012. This was also reported at various exhibitions and academic societies, including the Society for Information Display (SID) [24–28]. This volume offers an in-depth discussion of the fabrication of OLED displays reported at SID and elsewhere. The authors hope that the reader will find this information useful (see Chapters 4 and 5).